METHOD FOR FORMING RESIST PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a resist pattern forming method for preventing residue generated between resist side walls without fluctuating the dimension of a resist pattern interval, and to provide a method for manufacturing the semiconductor device using the resist pattern forming method. SOLUTION: This resist pattern forming method is characterized to form a resist pattern on a wafer, and to irradiate residue generated between resist side walls forming the resist pattern with an electronic ray under decompression. It is desired that the residue is detected by using a pattern defect device, and that the residual site detected by using an electronic microscope device with an electronic ray under decompression. It is desired that a decompression rate is 5.0×102Pa, and that an accelerating voltage is 1200V or less. Also, the resist pattern forming method is used at the time of forming the resist pattern for the method for manufacturing the semiconductor device. COPYRIGHT: (C)2004,JPO