| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that simultaneous forming of matching mark in a laser anneal process of polysilicon film forming for TFT cannot be accurately formed at low costs because of the size order difference between the cm order of a beam diameter for forming polysilicon film and theμm order of a beam diameter for forming marks for stepper. SOLUTION: The laser irradiation system 200 is composed by separately arranging an optical system 215 for marking from a laser optical system 212 for crystallization so that an axis of a laser beam of a laser for forming mark is identical axis of the laser for crystallization, and by use of a elatively low cost and easy-to-use Nd:YAG laser. The high accurate matching mark for a stepper having an optical constant different from other region on the semiconductor thin film 103 can be formed by the relatively low cost laser irradiation system 200. COPYRIGHT: (C)2004,JPO |
