发明名称 |
METHOD FOR CONTROLLING A RECESS ETCH PROCESS |
摘要 |
A method of controlling a recess etch process for a multilayered substrate having a trench therein and a column of material deposited in the trench includes determining a first dimension from a surface of the substrate to a reference point in the substrate by obtaining a measured net reflectance of at least a portion of the substrate including the trench, computing a modeled net reflectance of the portion of the substrate as a weighted incoherent sum of reflectances from n1 different regions constituting the portion of the substrate, determining a set of parameters that provides a close match between the measured net reflectance and the modeled net reflectance, and extracting the first dimension from the set of parameters; computing an endpoint of the process as a function of the first dimension and a desired recess depth measured from the reference point; and etching down from a surface of the column of material until the endpoint is reached. |
申请公布号 |
WO2004015727(A2) |
申请公布日期 |
2004.02.19 |
申请号 |
WO2003US25156 |
申请日期 |
2003.08.12 |
申请人 |
LAM RESEARCH CORPORATION;VENUGOPAL, VIJAYAKUMAR, C.;PERRY, ANDREW, J. |
发明人 |
VENUGOPAL, VIJAYAKUMAR, C.;PERRY, ANDREW, J. |
分类号 |
G01B11/02;G01B11/06;G01N21/00;G01N21/27;G01N21/45;H01L21/027;H01L21/3065;H01L21/334;H01L21/8242;H01L27/108 |
主分类号 |
G01B11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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