| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a capacitor, having increased capacitance per unit area by using an existing material, and to provide a method for forming a memory cell having the capacitor. <P>SOLUTION: The memory cell 1 has a source region 14 and a drain region 16 formed on a wafer 2, a source electrode 36, and a polycrystalline silicon layer 22a on the drain region 16. The memory cell also has a silicon oxide film 4 on the wafer 2 and a gate electrode 12 on the silicon oxide film 4. Further, the memory cell 1 has a capacitor C. The capacitor C has an upper electrode UE, a TiON layer 24b and a silicon oxide film 26 as the dielectric material, and a polycrystalline silicon layer 22a and a TiON layer 24a as a lower electrode LE. The TiON layer 24b is formed at the deposition of the silicon oxide film 26 and has a high dielectric constant to increase the capacitance of the capacitor C. <P>COPYRIGHT: (C)2004,JPO |
