| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an infrared light source improved in durability and integration. <P>SOLUTION: The infrared light source is equipped with an infrared light emitting element 2-11 having a first channel area 2-7 and a second channel area 2-8 each composed of a mesa-like portion formed by applying mesa etching, to a surface of a substrate 2-0, to a semiconductor integrated structure 2-6 on which a buffer layer 2-1, a channel layer 2-2, a spacer layer 2-3, a carrier feed layer 2-4 and a Schottky layer 2-5 are successively deposited and provided with biasing electrodes 2-9 and 2-10 on a surface of the first channel area 2-7; and a field effect transistor 2-15 provided with a source electrode 2-12, a drain electrode 2-13 and a gate electrode 2-14 on a surface of the second channel area 2-8. A biasing electrode 2-10 and a drain electrode 2-13 are electrically connected by an electric wiring 2-16. <P>COPYRIGHT: (C)2004,JPO |
