| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate for a nitride semiconductor which can be increased in area and is low cost, and which can increase the orientation property of a crystal formed thereon. <P>SOLUTION: A nitrogen plasma 15 is radiated on a quartz glass substrate 11, to obtain a substrate 10 for a nitride semiconductor which is such that a silicon nitride layer 12 is formed on a front surface of the quartz glass substrate 11. By forming a nitride semiconductor layer such as GaN on the substrate, the nitride semiconductor obtains an outstanding c-axis orientation. The use of this substrate for a nitride semiconductor makes it possible to manufacture a nitride semiconductor using a quartz glass substrate which can be increased in area and reduced in cost than a sapphire substrate or an SiC substrate which has been used for a GaN semiconductor in the past. <P>COPYRIGHT: (C)2004,JPO |
