发明名称 SEMICONDUCTOR MEMORY MODULE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory module in which a semiconductor chip can be tested after the semiconductor chip is mounted on a module substrate. <P>SOLUTION: A substrate pad VREFD provided at the outside of a mold resin 8 on a module substrate 2 and a word line drive voltage generating circuit 52 in a plurality of bare chips are connected electrically by only an electric wiring. Therefore, voltage can be forced to the word line drive voltage generating circuit 52 from the outside by applying a desired voltage to the substrate pad VREFD not only after a plurality of bare chips are mounted on the module substrate 2 but also after the plurality of bare chips are covered integrally with the mold resin 8. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004055009(A) 申请公布日期 2004.02.19
申请号 JP20020209612 申请日期 2002.07.18
申请人 RENESAS TECHNOLOGY CORP 发明人 KOZARU KUNIHIKO
分类号 H01L25/18;G11C11/401;G11C29/00;G11C29/12;G11C29/14;G11C29/56;H01L25/065;H01L25/07;(IPC1-7):G11C29/00 主分类号 H01L25/18
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