| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor light emitting device by suppressing the rise of an oscillation threshold current Ith. SOLUTION: A stripe-like ridge structure area is formed by successively laminating a 3rd p-type AlGaInP clad layer 7, a p-type GaInP intermediate layer 8, and a p-type GaAs cap layer 9 on a GaInP etching strip layer 6. An n-type AlInP current narrowing layer 11 is formed so as to fill the periphery of the stripe-like ridge structure area. The content of impurity in boundaries between the n-type AlInP current narrowing layer 11 and the GaInP etching strip layer 6, and between the layer 11 and the stripe-like ridge structure area is set to less than 1×10<SP>17</SP>/cm<SP>3</SP>. COPYRIGHT: (C)2004,JPO
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