| 摘要 |
PROBLEM TO BE SOLVED: To provide a patterning method for reducing imperfect patterns of a semiconductor device due to contamination. SOLUTION: After a trench for trench isolation is formed, the contamination 2 is stuck so as to block the trench (Figure (a)). An insulating film 3 (first film) is formed on a semiconductor substrate 1 by using a CVD method or the like (Figure (b)). The insulating film 3 on the semiconductor substrate 1 is subjected to planarize treatment by using CMP or etch back, and the semiconductor substrate 1 is exposed (Figure (c)). An insulating film 4 (second film) composed of the same material as the insulating film 3 is formed, by using CVD method or the like on the semiconductor substrate 1, from which the contamination 2 is eliminated (Figure (d)). As a result, the insulating film 4 is embedded in the trench for trench isolation. The insulating film 4 on the semiconductor substrate 1 is eliminated by CMP, so that a trench isolating structure, wherein the insulating film 4 is embedded in the trench for trench isolation, can be formed (Figure 1(e)). COPYRIGHT: (C)2004,JPO
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