| 摘要 |
PROBLEM TO BE SOLVED: To provide a rotary and revolutionary vapor phase epitaxial growth system, in which rotation and revolution can be controlled freely, depending on the growth conditions of a semiconductor thin film to be formed on a wafer. SOLUTION: A susceptor 31 is revolved, using a torque transmission gear 32 and a first drive motor M1, and a planetary gear 36, fixed rotatably onto the susceptor 31, is rotated using a sun gear 39 and a second drive motor M2. Consequently, the rotational control of revolution can be carried out, independently of the rotational control of rotation. COPYRIGHT: (C)2004,JPO
|
