发明名称 |
Semiconductor manufacturing apparatus and method |
摘要 |
A semiconductor apparatus and method for upgrading uniformity of critical dimension by compensating the flare effect at wafer edge are disclosed. In one embodiment of the invention, the invention uses an exposure plate mounted on tilt pincettes which can protrude and retract from a wafer stage of a stepper to eliminate the alteration of uniformity of critical dimension at wafer edge. The exposure plate uses the tilt pincettes to tilt along with a wafer so as to keep planar with the wafer.
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申请公布号 |
US2004032577(A1) |
申请公布日期 |
2004.02.19 |
申请号 |
US20020216878 |
申请日期 |
2002.08.13 |
申请人 |
TSAI KAO-TSAIR;TABATA YASUKO |
发明人 |
TSAI KAO-TSAIR;TABATA YASUKO |
分类号 |
G03F7/20;(IPC1-7):G03B27/72 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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