INTERCONNECTION STRUCTURE OF SEMICONDUCTOR AND METHOD OF FORMING THE SAME

摘要

PURPOSE: An interconnection structure of semiconductor and method of forming the same are provided to be capable of decreasing the parasitic capacitance between metal lines and reducing electrical noises. CONSTITUTION: An interconnection structure of semiconductor is provided with a semiconductor substrate(20), a plurality of cell pads(24) formed at the upper portion of the semiconductor substrate, the first interlayer dielectric(22) formed at the upper portion of the resultant structure, and a plurality of tungsten lines(26a) formed at the upper portion of the first interlayer dielectric. The metal line structure further includes a capping insulating pattern(28a) formed at the upper portion of the tungsten lines, the second interlayer dielectric(33) for covering resultant structure, and a plurality of contact plugs(38) connected with the cell pads through the second and first interlayer dielectric and aligned with the sidewalls of the capping insulating layer.