| 摘要 |
PURPOSE: A method for forming an MOS(Metal Oxide Semiconductor) transistor of a semiconductor device is provided to be capable of minimizing the deterioration of punch-through characteristics. CONSTITUTION: A pair of punch barriers(113a) are formed at the inner portions of a semiconductor substrate(100). A channel epitaxial layer(117) is formed at the upper surface of the semiconductor substrate. An isolation layer(119) is formed at the inner portion of the resultant structure for defining an active region. At this time, at least one punch barrier is located in the active region. At the time, the punch barrier is across the active region. Preferably, the punch barrier is made of an insulating layer. Preferably, a CVD(Chemical Vapor Deposition) silicon oxide layer is used as the insulating layer.
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