发明名称 VOLTAGE GENERATOR FOR FLASH MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a voltage generator for a flash memory device in which low voltage detection and regulation can be performed accurately without being affected by the change of a process or power source voltage. <P>SOLUTION: This device comprises a flash memory cell being over-erased, a flash memory cell programmed at least by one or more, and comparators of at least one or more for comparing respectively a cell current of a the flash memory cell being over-erased and a cell current of the programmed flash memory cell, low voltage is detected by an output of the comparator, and operation of charge pump circuits of at least one or more are controlled. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004055106(A) 申请公布日期 2004.02.19
申请号 JP20020357594 申请日期 2002.12.10
申请人 HYNIX SEMICONDUCTOR INC 发明人 O SE EUN
分类号 G11C16/06;G11C5/14;G11C16/30;(IPC1-7):G11C16/06 主分类号 G11C16/06
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