| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser diode with a current restricting layer and its manufacturing method. SOLUTION: The semiconductor laser diode comprises a substrate (50), a first material layer (61) laminated on the substrate, an active layer (56) which is laminated on the first material layer and in which a laser beam is excited, a ridge (69) which is laminated on the active layer to be projected vertically from the layer, and a second material layer (65) including the current restricting layer formed by injection of ions in predetermined depth around the ridge so that it restricts a current injected into the active layer. Then there realized is a high performance semiconductor laser diode having low threshold current value while maintaining the width of the ridge, eliminating a loss in an optical profile and reducing the profile width injected into the active layer. COPYRIGHT: (C)2004,JPO
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