| 摘要 |
PROBLEM TO BE SOLVED: To prevent an increase in leak current resulting from the formation of a depletion layer in a semiconductor device whose life time is controlled by irradiating radioactive rays such as electron rays or the like. SOLUTION: There is provided a semiconductor device in which an active device including one or more pn junctions and a nitride film are formed on a principal surface at one side of a semiconductor substrate and on the surface of the pn junction, respectively, and further the life time of a semiconductor layer formed with the pn junction is controlled by the radioactive rays such as the electron rays, wherein the nitride film is provided which is invulnerable to the irradiation of the electron rays. COPYRIGHT: (C)2004,JPO
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