| 摘要 |
A semiconductor device (10) and its production method,is disclosed in which a cap film for a wiring made of copper or a copper alloy may prevent or reduce stress corrosion cracking in the wiring. A semiconductor device (10) may include a wiring (11) made of copper or a copper alloy including a barrier film (12) formed between the wiring (11) and a cap film (13) for preventing copper diffusion. The barrier film (12) may include a SiC film to provide an exposure prevention film, which prevents the wiring (11) from being exposed to a film forming gas for the cap film (13), which includes a SiCN film.
|
