发明名称 |
Use of a dual-tone resist to form photomasks including alignment mark protection, intermediate semiconductor device structures and bulk semiconductor device substrates |
摘要 |
An alignment mark mask element protects an underlying alignment mark during subsequent processing of the fabrication substrate. The alignment mark mask element is formed concurrent with formation of a photomask from a dual-tone photoresist that exhibits a pattern reversal upon exposure to an energy level. A portion of the dual-tone photoresist above the alignment mark is exposed to an energy sufficient to reverse a positive tone resist to a negative tone, which remains above the alignment mark after developing. The remainder of the dual-tone photoresist is exposed through a reticle at a lesser energy level and patterned to define aperture locations of a photomask for formation of semiconductor device features. In addition, a photomask for use on a fabrication substrate and an intermediate semiconductor device are disclosed. Methods of forming a photomask and an intermediate semiconductor device structure are also disclosed.
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申请公布号 |
US2004032031(A1) |
申请公布日期 |
2004.02.19 |
申请号 |
US20020219168 |
申请日期 |
2002.08.15 |
申请人 |
HOLSCHER RICHARD D.;ARDAVAN NIROOMAND |
发明人 |
HOLSCHER RICHARD D.;ARDAVAN NIROOMAND |
分类号 |
H01L23/544;(IPC1-7):H01L23/544 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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