Method for defining a dummy pattern around an alignment mark on a wafer

摘要

A method for defining a dummy pattern around an alignment mark on a wafer. First, a wafer having an alignment area with an alignment mark is provided. Thereafter, lithography is performed on the wafer by a mask to define a first dummy pattern around the alignment mark in the alignment area. The mask includes a first dummy pattern area, with a first pattern to mask the alignment mark and a second pattern to define the first dummy pattern, and a second dummy pattern area, with a third pattern to define a second dummy pattern around the first dummy pattern.