HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS
摘要
<p>A heat treatment method having a step wherein plural zones of a heat treatment atmosphere in a reactor are respectively heated by plural heating means and a step wherein a thin film is formed on surfaces of plural substrates by introducing a treatment gas into the reactor. The heat treatment steps include a first heat treatment step wherein plural first substrates, each of which consumes less treatment gas than a product substrate, are used; a first measuring step wherein the thickness of a thin film is measured in each zone; a first setting step wherein a temperature preset value is set in each heating means so that the thickness of each film reaches the target value; a second heat treatment step wherein the preset temperature is used for plural second substrates, each of which consumes more treatment gas than the first substrate; a second measuring step wherein the thickness of a thin film formed on a surface of the second substrate is measured in each zone; a second correcting step wherein the preset temperature set in each heating means is corrected; and a third heat treatment step wherein the heat treatment steps are conducted on plural product substrates using the corrected temperature preset value.</p>
申请公布号
WO2004015750(A1)
申请公布日期
2004.02.19
申请号
WO2003JP10173
申请日期
2003.08.08
申请人
TOKYO ELECTRON LIMITED;SUZUKI, KEISUKE;WANG, WENLING;YONEKAWA, TSUKASA;IKEUCHI, TOSHIYUKI;SATO, TORU