| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable proper wire bonding to be conducted by suppressing a decrease in bondability, due to the surface oxide film of copper in a semiconductor device using copper for inner wirings. <P>SOLUTION: In a large-scale integrated chip 10, an active element or the like is formed in a state of a semiconductor wafer, then the inner wirings 19 are formed of a material containing the copper as a main component; thereafter a surface protective film (passivation film) 24 is formed; and an opening corresponding to a region of an external connection electrode 14 is provided by using a suitable etching technique. The upper surface of the wafer is covered with a metal mask opened at a part of the region of the electrode 14, and then a thin film layer, which is very thin of tin having a thickness of about 1 to 10 nm, is formed by chemical vapor deposition method or physical vapor deposition method. Thus, the electrode 14 in which a very ultra-thin-film layer 26 of the tin, having a thickness of about 1 to 10 nm, is adhered to the surface of a substrate copper layer of the externally connecting electrode region, can be obtained. <P>COPYRIGHT: (C)2004,JPO |
