| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor laser that can obtain amplified signal light having a small RIN value, and to provide a semiconductor laser module and a Raman amplifier, using the module. <P>SOLUTION: The semiconductor laser has a GRIN-SCH-MQW active layer 3 formed between an emitting-side reflection film 15 provided on its laser light-emitting edge and a reflection film 14 provided on its laser light-reflecting edge and outputs laser light, in a plurality of longitudinal oscillation modes. The semiconductor laser is also provided with a modulation signal impressing section 22, which generates a modulation signal for modulating a bias current injected into the GRIN-SCH-MQW active layer 3 and superimposes the modulation signal upon the bias current. The modulation signal impressing section 22 reduces the RIN after transmission, by giving return loss of the stimulated Brillouin scattering, having a value which is equal to or smaller than a value obtained, by adding 2dB to the level of the Rayleigh scattering through modulating the laser light. <P>COPYRIGHT: (C)2004,JPO</p> |
