| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor substrate for reducing threading dislocation with excellent crystallinity. SOLUTION: The method for manufacturing the nitride semiconductor substrate utilizing lateral growth comprises a first process for forming a separation film in a groove of the substrate formed with a step, and a second process for growing a first nitride semiconductor on the substrate formed of a separation film in the groove, thereafter removing the first nitride semiconductor on the separation film by lift-off, and thereafter using the first nitride semiconductor left on a projection face of the substrate as a grown nucleus, and laterally growing a second nitride semiconductor. COPYRIGHT: (C)2004,JPO
|
