| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide based p-type thermoelectric conversion material having a large thermoelectric conversion efficiency at temperatures of 600°C or more, and to provide its manufacturing method. SOLUTION: This silicon carbide based p-type thermoelectric conversion material is formed by sinteringα-type silicon carbide, elements in group 13 of the periodic table and/or their compounds, and a sintering aid. COPYRIGHT: (C)2004,JPO
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