| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for etching a thin film utilizing a rotary processor. SOLUTION: On the rotary etching processor, a wafer is wetted at first with pure water and an etching solution in order to remove contaminants and a thin film surface layer from the wafer surface. It is then rotated at a low speed (about 0-50 rpm), and the etching solution is poured and deposited on the wafer surface such that the etching solution remains on the wafer. It is further rotated at a low speed (about 0-50 rpm), and paddle wet etching is performed while keeping the etching solution on the wafer. Upon the completion of etching, rotation is accelerated and the wafer is cleaned by injecting pure water. Finally, moisture is removed from the IPA followed by the complete removal of moisture from the wafer by high-speed rotation. COPYRIGHT: (C)2004,JPO
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