| 摘要 |
The present invention realizes high integration by utilizing an aluminum oxide as a capacitor insulating layer having a high dielectric constant, improving characteristics of a semiconductor device by using a low temperature vapor deposition and a low temperature annealing, improving leakage current characteristics by utilizing titanium as an upper electrode of the capacitor and reduces manufacturing costs by simplifying the capacitor manufacturing process. Therefore, the present invention is very useful and effective.
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