发明名称 |
Method of forming a photoresist pattern and method for patterning a layer using a photoresist |
摘要 |
An organic anti-reflective coating (ARC) is formed over a surface of a semiconductor substrate, and a resist layer including a photosensitive polymer is formed on the ARC. The photoresistive polymer contains a hydroxy group. The resist layer is then subjected to exposure and development to form a resist pattern. The resist pattern to then silylated to a given depth by exposing a surface of the resist pattern to a vapor phase organic silane mixture of a first organic silane compound having a functional group capable of reacting with the hydroxy group of the photoresistive polymer, and a second organic silane compound having two functional groups capable of reacting with the hydroxy group of the photoresistive polymer Then, the silylated resist pattern is thermally treated, and the organic ARC is anisotropically etched using the thermally treated resist pattern as an etching mask.
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申请公布号 |
US2004033445(A1) |
申请公布日期 |
2004.02.19 |
申请号 |
US20030375102 |
申请日期 |
2003.02.28 |
申请人 |
LEE SUNG-HO;WOO SANG-GYUN;CHAE YUN-SOOK;KIM JI-SOO |
发明人 |
LEE SUNG-HO;WOO SANG-GYUN;CHAE YUN-SOOK;KIM JI-SOO |
分类号 |
H01L21/027;G03F7/40;(IPC1-7):G03F7/20 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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