| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent increase in the area of data amplifier and sense amplifier regions, in a multi-bit DRAM having concentration layout sense amplifier using an open-bit system. <P>SOLUTION: For a semiconductor storage which is disclosed, in the multi-bit DRAM having the concentration layout sense amplifier in the open-bit system: a memory region comprises a plurality of cell arrays, consisting of a sense amplifier row SAL aligned in a vertical direction and cell regions CELL at both the sides of the sense amplifier row; a group of data amplifiers DAMP, connected to both the adjacent sense amplifier rows, is arranged in a direction of orthogonally crossing the sense amplifier row; a data amplifier row at both the sides of the sense amplifier row is activated, when the sense amplifier row is activated; so that the same group of data amplifiers connected to both the sense amplifier rows is shared, even if either of the adjacent sense amplifier rows is activated. <P>COPYRIGHT: (C)2004,JPO |
