发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same whereby a circuit formation surface for semiconductor elements is readily flattened when a plurality of semiconductor elements are arranged, and a forming step for rewiring is simplified. <P>SOLUTION: A resin layer 14 is formed on a substrate 11. The resin layer 14 is equal in thickness to semiconductor elements 12 and 13 to be mounted. The resin layer 14 is partially removed to form openings 14a and the semiconductor elements are disposed in the openings 14a with the circuit formation surfaces placed faceup. An organic insulating layer 16 is formed over a surface of the resin layer 14 and the circuit formation surfaces of the semiconductor elements and a rewiring layer 17 is formed on the organic insulating layer 16. An input/output terminal 18 is formed on the rewiring layer. The input/output terminal 18 is electrically connected to an electrode of the semiconductor element via wiring in the rewiring layer. The semiconductor elements 12 and 13 are 50 &mu;m or less in thickness. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004056093(A) 申请公布日期 2004.02.19
申请号 JP20030127344 申请日期 2003.05.02
申请人 FUJITSU LTD 发明人 FUJISAWA TETSUYA;IKUMO MASAMITSU;MATSUKI HIROHISA;SATO MITSUTAKA;IGAWA OSAMU;AIBA YOSHITAKA
分类号 H01L25/18;H01L25/04;H01L25/065;H01L25/07 主分类号 H01L25/18
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