| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent the short-circuit between a power source voltage and a ground voltage among a plurality of memory chips via an I/O terminal outputting a busy signal indicating a busy state of the respective chips even if variation occurs among the memory chips for an initializing operation period. <P>SOLUTION: The semiconductor storage device comprises a plurality of memory chips MC1 and MC 2, and an I/O terminal 13 which is provided in correspondence with these memory chips and outputs busy signals which are made in a busy state when the power source voltage value reaches the specification guarantee range after power is applied, are maintained in the busy state until completion of initializing operations of the memory chips, and are released from the busy state after completion of all the initiating operations of the memory chips. <P>COPYRIGHT: (C)2004,JPO</p> |
