PHOTOMASK BLANK, PHOTOMASK AND METHOD OF SELECTING PHOTOMASK BLANK

摘要

PROBLEM TO BE SOLVED: To accurately form a desired fine pattern with spots of≤150 nm formed in wet etching and to realize sufficient adaptation to higher integration of a semiconductor integrated circuit device etc.

SOLUTION: The photomask blanks are formed by laminating at least one layer of a light shielding film 2 and at least one layer of an antireflective film 3 on a transparent substrate 1 transmitting exposure light. Then etching spots formed in wet etching are made small to≤150 nm.

COPYRIGHT: (C)2004,JPO