| 摘要 |
PROBLEM TO BE SOLVED: To provide a JBS having a short reverse recovery time, a low forward voltage drop, a small reverse leakage current, a low noise, and a high reverse breakdown voltage, at a low cost. SOLUTION: In the JBS having a structure composed of a Schottky junction and a P-N junction; the inside area S of a guard ring 5 and an area Sp (S=Sp+Sn) of a p-type active region 4 are so set as to satisfy the formula, Sn/S≥40%; a maximum electric field intensity Emax occurs in the guard ring 5, and the impurity concentration and thickness of a semiconductor layer 2 and the depth of the p-type active region 4 are set so as to satisfy the formula Emax≤3.0×10<SP>5</SP>(V/cm), when a reverse voltage is applied; Sp/S is so set as to satisfy a relational expression Ejbs≤0.86×Esbd between a maximum electric field intensity Ejbs occurring, in a region between the p-type active regions 4 and an electric field intensity Esbd, occurring at a Schottky junction when Sp is set to zero; the heightψBN of the Schottky barrier of a barrier metal 7 is set to satisfy the formulaψBN≥0.68eV; and a lifetime killer is formed by irradiation with an electron beam. COPYRIGHT: (C)2004,JPO |
