| 摘要 |
An exposing method in which the total exposure of the portion where four patterns are adjacent to one another is almost equal to that of the other portions when patterns are transferred two-dimensionally by image stitching. Projected images (30A to 30D) of the pattern of a reticle are so stitched as to overlap with one another in both X and Y directions on a wafer to expose the wafer. The distribution of exposure of the rectangular corner parts, i.e., the areas (stitching portions (31)) where four projected images (30A to 30D) are adjacent to one another is determined according to the characteristic which is the product of a first characteristic gradually decreasing in the X direction and a second characteristic gradually decreasing in the Y direction.
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