发明名称 DUAL MATCH-LINE, TWIN-CELL, BINARY-TERNARY CAM
摘要 A content addressable memory (CAM)(10, 102) and method having a data-in sub-circuit (44), memory cells (16, 18), a match-high line (36), a match-low line (38), and pre-charge devices (40, 42). Input lines (30, 32, 48, 50) from the data-in sub-circuit (44) are not necessarily discharged to ground in every cycle of a clock signal (62) used by the memory cells (16, 18). Further, the pre-charge devices (40, 42) may be operated at one half of the rate of the clock signal (62). Yet further, the CAM (10, 102) may be selectively configured to operate in either binary or ternary mode.
申请公布号 US2004032758(A1) 申请公布日期 2004.02.19
申请号 US20020064770 申请日期 2002.08.15
申请人 INTEGRATED SILICON SOLUTION, INC. 发明人 CHENG PAUL;CHOW NELSON L.
分类号 G11C15/00;G11C15/04;(IPC1-7):G11C15/00 主分类号 G11C15/00
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