Production of a SOI substrate comprises preparing a SOI substrate by embedding a trenched oxide layer between a crystalline silicon layer and a silicon substrate

摘要

Production of a SOI substrate comprises preparing a SOI substrate by: (a) embedding a trenched oxide layer (BOX) between a crystalline silicon layer and a silicon substrate (Si); (b) applying a hard mask layer on at least one region of the silicon layer; (c) forming a window in the hard mask layer to expose the silicon layer in the window region; (d) removing the silicon layer in the window region by dry etching from a first silicon layer thickness to a second silicon layer thickness; and (e) removing the silicon layer in the window region by local oxidation of the silicon and wet chemical etching of the silicon oxide formed to a third silicon layer thickness.