发明名称 SILICON NITRIDE SINTERED COMPACT AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem that a conventional silicon nitride sintered compact shows a rapid loss of strength due to softening of the glass component present in the grain boundary when used in a high temperature environment of &ge;1,000&deg;C and improve its high-temperature strength, creep resistance, and oxidation resistance. <P>SOLUTION: The silicon nitride sintered compact is manufactured to have the grain boundary phase comprising Si, Hf, O, N, and rare-earth elements (atomic number 21, 39, 57-71) and containing Hf of 0.5-5 wt.% and rare-earth elements of 0.1-6 wt.%. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004051459(A) 申请公布日期 2004.02.19
申请号 JP20020214347 申请日期 2002.07.23
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 HIROSAKI NAOTO
分类号 C04B35/584 主分类号 C04B35/584
代理机构 代理人
主权项
地址