| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device reducing a manufacturing cost by simplifying a manufacturing process forming a rewiring pattern on a face formed with the electrode terminal of a semiconductor wafer and reducing a material cost, and to provide its manufacturing method. <P>SOLUTION: The method of manufacturing the semiconductor device having a rewiring pattern 28 for being connected to an electrode terminal 12 on the face formed with the electrode terminal of the semiconductor wafer 10 at one end side and connected to a connection pattern 26 formed to fold a wire at the other end side, includes processes for performing electrolytic nickel plating of a metal thin film layer 17 as a plating power supply layer, next performing electrolytic gold plating and forming a nickel plating layer 17b and a gold thin film plating layer on the metal thin film layer; for bonding a gold wire at a part which is a pad part of the re-wiring pattern to form a connection terminal 26; and for using the metal thin film layer 17 as the plating power supply layer and performing electrolytic plating 38 for giving elasticity to the connection terminal 26. Furthermore, the method includes processes for using the metal thin film layer 17 as the plating power supply layer and performing protective gold plating 40 on the surface of the re-wiring pattern and the outer face of the connection terminal; and for removing a plating pattern 30, then removing the metal thin film layer 17 at a part exposed on the surface of the semiconductor wafer 10 and forming the re-wiring pattern 28 on the surface of an insulating layer 14. <P>COPYRIGHT: (C)2004,JPO |
