| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an erasing method for a flash memory cell to converge threshold valtage for the cell with constant voltage by changing a method to discharge the flash memory after it is erased in order to perform a recovery process also at the same time when erased. <P>SOLUTION: The erasing method for the flash memory cell consisting of a substrate, a source, a drain, a tunnel oxide film, a floating gate, a dielectric film and a control gate is constituted with a step to perform an erasing process for the cell by applying a negative voltage to the control gate and applying positive voltage of the erasing voltage to the substrate; a step to discharge the control gate by grounding it; a step to discharge the source by grounding it and a step to discharge and recover at the same time by grounding the substrate. <P>COPYRIGHT: (C)2004,JPO</p> |
