发明名称 MANUFACTURING METHOD OF FIELD EMISSION ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a field emission element with a small tip radius of curvature and a uniform field emission characteristic. <P>SOLUTION: Uniform gold clusters with a radius of about 5 nm is formed by depositing gold using a mask on an oxide film 11 formed on a silicon substrate 10. A molten alloy droplet 1 alloyed with the silicon substrate 10 is formed by raising a substrate temperature to an eutectic point or more. Tungsten silicide 13 is selectively grown directly below the alloy droplet 12 by carrying out a gaseous phase-liquid phase-solid phase reaction. An acute columnar crystal 14 is formed on the silicon substrate 10 by carrying out reactive ion etching of the silicon substrate 10 having the tungsten silicide 13 by using the alloy droplet 12 as a mask. By this, the field emission element with the small tip radius of curvature and the uniform field emission characteristic can be provided. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004055141(A) 申请公布日期 2004.02.19
申请号 JP20020206648 申请日期 2002.07.16
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SHIBATA MOTOJI
分类号 H01J9/02;(IPC1-7):H01J9/02 主分类号 H01J9/02
代理机构 代理人
主权项
地址