发明名称 SEMICONDUCTOR FORCE DETECTING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor force detecting device, which is high in sensitivity and capable of detecting a minute force applied to a beam with high sensitivity. SOLUTION: The semiconductor force detecting device is mechanical, and equipped with an InAs thin film 2 as a semiconductor thin film that is processed into a beam shape, and is capable of detecting minute forces applied to the cantilever beam 11 with high sensitivity, by detecting the elastic deformation of the cantilever beam 11 formed of the InAs thin film 2. The InAs thin film 2 has a low-order quantum structure, the energy difference between an electron quantum level formed in the low-order quantum structure and the Fermi level is set equal to thermal energy or below. The semiconductor low-order quantum structure is used in the thin film forming the cantilever beam 11, so that the semiconductor force, detecting device possessing at a very high sensitivity, can be obtained. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004055592(A) 申请公布日期 2004.02.19
申请号 JP20020206946 申请日期 2002.07.16
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 YAMAGUCHI KOJI;HIRAYAMA YOSHIO
分类号 G01L1/18;H01L29/06;H01L29/66;H01L29/84;(IPC1-7):H01L29/84 主分类号 G01L1/18
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