| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of realizing a fast semiconductor element with low power consumption by providing a technique capable of deceasing defect density considered to be a problem of an SGOI substrate and reducing the cost. SOLUTION: An opening is bored in part of an insulating film deposited on an Si substrate to expose an Si surface. Then epitaxial growth of Si<SB>1-x</SB>Ge<SB>x</SB>single crystal (0<x<1) using the Si exposed part as seed crystal is carried out to grow the grating-reduced Si<SB>1-x</SB>Ge<SB>x</SB>single crystal covering the insulating film. COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2004055943(A) |
申请公布日期 |
2004.02.19 |
| 申请号 |
JP20020213400 |
申请日期 |
2002.07.23 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
INOUE AKIRA;TAKAGI TAKESHI;ASAI AKIRA;KANZAWA YOSHIHIKO;SORADA HARUYUKI |
| 分类号 |
H01L21/762;H01L21/02;H01L21/20;H01L21/205;H01L21/8238;H01L27/08;H01L27/092;H01L27/12;(IPC1-7):H01L27/12;H01L21/823 |
主分类号 |
H01L21/762 |
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