| 摘要 |
PROBLEM TO BE SOLVED: To reduce the leak current of a power MISFET. SOLUTION: A source electrode SE which is brought into contact with an n<SP>+</SP>-type semiconductor region (source region) 17 and a p<SP>+</SP>-type semiconductor region (package contact region) 23 of an n channel-type power MISFET is composed of an Al film 27 and a barrier film 25 formed of MoSi<SB>2</SB>below the film 27. A material whose barrier height with n-type Si becomes large is used as the barrier film. Thus, contact resistance against n-type Si is enlarged, an emitter and a base of a parasitic bipolar transistor are reversely biased, and they are difficult to become on-states. COPYRIGHT: (C)2004,JPO
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