发明名称 METAL-INSULATOR-METAL CAPACITOR HAVING PREDETERMINED CAPACITANCE, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an MIM capacitor having a predetermined capacitance and a semiconductor device including it. SOLUTION: The MIM capacitor includes first and second capacitors coupled mutually in parallel wherein the first capacitor is formed by stacking a first lower metal film, a first dielectric film and a first upper metal film in order, while the second capacitor is formed by stacking a second lower metal film, a second dielectric film and a second upper metal film in order, the second lower metal film of the second capacitor is electrically connected to the first upper metal film of the first capacitor, and the second upper metal film of the second capacitor is electrically connected to the first lower metal film of the first capacitor. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004056139(A) 申请公布日期 2004.02.19
申请号 JP20030272530 申请日期 2003.07.09
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE SOO-CHEOL;JANG DONG-RYUL
分类号 H01L27/04;H01G4/228;H01G4/33;H01G4/38;H01L21/02;H01L21/822;H01L23/522;H01L27/00;H01L27/01;H01L27/08;H01L27/108;H01L29/92;(IPC1-7):H01L21/822 主分类号 H01L27/04
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