| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which includes a fundamental aggregate element wherein a gate pattern (shape of a gate) can be always finished uniform after a wafer process. SOLUTION: On a semiconductor substrate (not shown in Figure), a p-type active region 1 and an n-type active region 2 are formed. Above these active regions 1 and 2, three gate interconnection lines 3, 4, and 5 are formed. In the p-type active region 1, projecting portions to form contact holes 6 and 7 therein are formed on the side opposite from one facing the n-type active region 2 (the upper side of the p-type active region 1 in Figure). The contact hole 6 formed in the projecting portion is formed between the gate interconnection lines 3 and 4, while the contact hole 7 formed in the projecting portion is formed between the gate interconnect lines 4 and 5. COPYRIGHT: (C)2004,JPO
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