Semiconductor device, method for evaluating the same, and method for fabricating the same

摘要

Semiconductor devices each having a semiconductor layer (1), a gate insulating film (2), a gate electrode (3), an offset spacer layer (4), and SD extension diffusion layers (6) into which ions have been implanted by using the gate electrode (3) and the offset spacer layer (4) as a mask are formed by varying the film thickness of the offset spacer layer (4) and leakage current values in the respective semiconductor devices are measured. The results of the measurements show that the film thickness value of the offset spacer layer (4) and the leakage current value have a correlation therebetween and that the film thickness value of the offset spacer layer (4) when the leakage current value becomes zero corresponds to the length of the portion of the semiconductor layer (1) extending from under the outer end of the offset spacer layer (4) to the tip end of an impurity diffusion layer.