SEMICONDUCTOR DEVICE HAVING REVERSE ACTIVE REGION FORMED BY SELECTIVE EPITAXIAL GROWTH AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device having a reverse active region formed by a selective epitaxial growth and a manufacturing method thereof are provided to be capable of increasing the width of a gate and reducing leakage current. CONSTITUTION: A semiconductor device is provided with a semiconductor substrate(100), a multi-layer having a contact region(290), deposited on semiconductor substrate, a reverse active region(300) formed in the contact region, and a gate formed on the surface of the reverse active region. At this time, the upper portion of the reverse active region is larger than the lower portion. At the time, a pair of stress portions(300-1) are formed at the upper portion of the reverse active region, so that three kinds of upper surfaces are formed at the upper portion of the reverse active region.