发明名称 MANUFACTURING METHOD OF THIN FILM ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem of prior arts that there is still room for further improvement in the crystallinity of an Al electrode layer depending on a potential applied to a piezoelectric substrate when the film of a ground electrode layer whose principal component is Ti is deposited on a piezoelectric substrate by the vapor deposition method and the film of a main electrode layer whose principal component is Al is deposited to improve the crystallinity of the main electrode layer. <P>SOLUTION: When films of the ground electrode layer 5 and the main electrode layer 4 are deposited on the piezoelectric substrate 2 by the vapor deposition method, a float potential is applied to the piezoelectric substrate 2 so as to stabilize the surface potential of the piezoelectric substrate 2. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004056355(A) 申请公布日期 2004.02.19
申请号 JP20020209486 申请日期 2002.07.18
申请人 MURATA MFG CO LTD 发明人 NAKAGAWARA OSAMU
分类号 H01L41/22;H01L41/09;H01L41/18;H01L41/29;H03H3/08;H03H9/145 主分类号 H01L41/22
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