发明名称 DEVICE AND METHOD FOR PLASMA TREATMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a device and method for plasma treatment, by which inconvenience which occurs when a dielectric film exists on an electrode upon which a DC voltage for electrostatic attraction is impressed can be eliminated, while abnormal discharges, such as DC discharge etc., are suppressed. <P>SOLUTION: The plasma treatment device, which performs plasma treatment on a dielectric substrate G to be treated, is provided with the electrode 4 on which the substrate G is placed directly, a pressing mechanism 7 which presses the peripheral edge of the substrate G placed on the electrode 4 toward the electrode 4, and a treatment gas supplying mechanism 19 which supplies a process gas to the periphery of the substrate G. The treatment device is also provided with a plasma-generating means 26, which generates a plasma of the process gas in the periphery of the substrate G and and a DC power source 6, which is connected to the electrode 4 and impresses the DC voltage upon the electrode 4. While the pressing mechanism 7 presses the peripheral edge of the substrate G placed on the electrode 4, the substrate G is sucked to the electrode 4 by impressing the DC voltage on the electrode 4. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004055585(A) 申请公布日期 2004.02.19
申请号 JP20020206823 申请日期 2002.07.16
申请人 TOKYO ELECTRON LTD 发明人 SATOYOSHI TSUTOMU
分类号 H05H1/46;C23C16/458;G02F1/13;H01L21/00;H01L21/205;H01L21/3065 主分类号 H05H1/46
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