| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for plasma processing which can realize a compact apparatus, while assuring a uniform etching distribution. SOLUTION: In the apparatus for plasma processing including a second electrode 4, having a gas diffusing part 4e for diffusing a plasma generating gas and made to vertically movably face above a first electrode 3 placing a silicon wafer 6 to be processed, a space S1 of a gap, G1 narrower than an exhaust space 2a formed above the electrode 4, is formed as a gas exhaust path for exhausting gas in a discharge space 2b to the space 2a, between an outside face 4h of the electrode 4 and an inside face 2c of a processing chamber, and a conductance of the exhaust path is reduced fully, as compared with that of the space 2a. Thus, gas exhaustion can be conducted uniformly without bias, and a compact apparatus for plasma processing can be realized, while the uniformity of etching distribution is assured. COPYRIGHT: (C)2004,JPO
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