| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that surely separates accumulated charges in a 2-bit operation by improving a charge holding characteristic, regarding the nonvolatile semiconductor memory device for storing information by accumulating charges in a charge accumulation layer made of an insulation layer, and a method of manufacturing the same. SOLUTION: The memory comprises a source region 44 and a drain region 46 which are formed in a semiconductor substrate 30; a gate electrode 36 which is formed between the source region 44 and the drain region 46 via an insulation film 32 on the semiconductor substrate 30; and charge accumulating portions 42a and 42b each of which is made of a dielectric material and is formed on at least one of the side wall of the gate electrode 36 at the source region 44 side and the side wall of the gate electrode 36 at the drain region 46 side. Thus, charges accumulated in the source region 44 and charges accumulated in the drain region 46 are readily separated spatially. COPYRIGHT: (C)2004,JPO
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